Gallium antimonide complementary HFET

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

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257 24, 257274, H01L 29772, H01L 29201

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active

060547294

ABSTRACT:
A complementary heterojunction field effect transistor (CHFET) in which the channels for the p-FET device and the n-FET device forming the complementary FET are formed from gallium antimonide (GaSb) or indium antimonide (InSb). An n-type HFET structure is grown, for example, by molecular beam epitaxy (MBE) in order to obtain the highest electron or hole mobility. The complementary p-type HFET is formed by p-type doping of a cap layer thereby eliminating the need for two implants for channel doping. In order to reduce the complexity of the process for making the CHFET, a common gold germanium alloy contact is used for both the p and n-type channel devices, thereby eliminating the need for separate ohmic contacts, resulting in a substantial reduction in the number of mask levels and, thus, complexity in fabricating the device.

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