Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1998-11-03
2000-04-25
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257 24, 257274, H01L 29772, H01L 29201
Patent
active
060547294
ABSTRACT:
A complementary heterojunction field effect transistor (CHFET) in which the channels for the p-FET device and the n-FET device forming the complementary FET are formed from gallium antimonide (GaSb) or indium antimonide (InSb). An n-type HFET structure is grown, for example, by molecular beam epitaxy (MBE) in order to obtain the highest electron or hole mobility. The complementary p-type HFET is formed by p-type doping of a cap layer thereby eliminating the need for two implants for channel doping. In order to reduce the complexity of the process for making the CHFET, a common gold germanium alloy contact is used for both the p and n-type channel devices, thereby eliminating the need for separate ohmic contacts, resulting in a substantial reduction in the number of mask levels and, thus, complexity in fabricating the device.
REFERENCES:
patent: 4538165 (1985-08-01), Chang et al.
patent: 5192698 (1993-03-01), Schuermeyer et al.
patent: 5223451 (1993-06-01), Uemura et al.
patent: 5243206 (1993-09-01), Zhu et al.
patent: 5262335 (1993-11-01), Strieit et al.
patent: 5266506 (1993-11-01), Green, Jr.
patent: 5349214 (1994-09-01), Tehrani et al.
patent: 5420442 (1995-05-01), Hasenberg et al.
patent: 5429963 (1995-07-01), Martinez et al.
patent: 5444016 (1995-08-01), Abrokwah et al.
patent: 5455429 (1995-10-01), Paoli et al.
patent: 5479033 (1995-12-01), Baca et al.
patent: 5480829 (1996-01-01), Abrokwah et al.
Guay John
TRW Inc.
Yatsko Michael S.
LandOfFree
Gallium antimonide complementary HFET does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gallium antimonide complementary HFET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium antimonide complementary HFET will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-995207