Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1988-10-17
1993-11-30
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
333 20, 257 52, 257471, 257528, 257798, H01L 2702, H01L 2900, H01L 4900, H04B 304
Patent
active
052670201
ABSTRACT:
A high bandwidth RF sampler using equivalent time sampling comprising an RF coplanar waveguide integrated with sampling diodes on a gallium arsenide substrate. A monolithic, integrated nonlinear transmission line is integrated on the same substrate to receive sample pulses. These pulses are reshaped by the nonlinear transmission line to have a very fast edge. This edge is differentiated by a shunt inductance of a short circuit termination of a slot line portion of the RF signal coplanar waveguide. The resulting delta function sample pulses cause the sample diodes and integrated capacitors to develop an intermediate output frequency which is a replica of the RF signal at a lower frequency and no voltage conversion loss. RF signals of up to 300 Ghz can be sampled using this circuit.
REFERENCES:
patent: 4075650 (1978-02-01), Calviello
patent: 4460880 (1984-07-01), Turner
patent: 4672341 (1987-06-01), Axell
patent: 4956568 (1990-09-01), Su et al.
"Microwave Sampling Effective for Ultra Broad Band Frequency Conversion", Moore et al., MSN & CT, 1986, pp. 113-126.
Landauer, Rolf, "Parametric Amplification along Nonlinear Transmission Lines", Journal of Applied Physics (Mar. 1960), vol. 31, No. 3, pp. 479-489.
Landauer, R., "Shock Waves in Nonlinear Transmission Lines and Their Effect on Parametric Amplification", IBM Journal (Oct. 1960), pp. 391-401.
Rodwell et al., "Nonlinear Transmission Line For Picosecond Pulse Compression and Broadband Phase Modulation", Electronic Letters (Jan. 1987), vol. 23, No. 3, pp. 109-110.
Jager et al., "Nonlinear Wave Propagation along Periodic-Loaded Transmission Line", Appl. Phys. 15 (1978), pp. 393-397.
Jager, D., "Characteristics of Travelling Waves Along the Non-Linear Transmission Lines for Monolithic Integrated Circuits: A Review", Int. J. Electronics (1985), vol. 58, No. 4, pp. 649-668.
Gibson, Hewlett-Packard Journal (Feb. 1986), vol. 37, No. 2, pp. 4-10.
Merkelo, "A de-to-20 GHz Thin-Film Signal Sampler for Microwave Instrumentation", Hewlett-Packard (Apr. 1973), pp. 10-13.
Grove, "A DC To 12.4 GHz Feedthrough Sampler For Oscilloscopes and Other RF Systems", IEEE Transactions on Microwave Theory and Techniques (Dec. 1966), vol. MTT-14, No. 12, pp. 12-15.
Howard et al., "The Wideband Sampling Gate An Analysis, Characterization and Application Discussion", Hewlett-Packard Publication, pp. 1-11.
Landauer, Journal of Applied Physics vol. 31:3:479-484 (1960).
Landauer, IBM Journal pp. 391-401 (1960).
Rodwell et al., Electronics Letters, vol. 23:3:109-110 (1987).
Jager et al., Appl. Phys. vol. 15:393-397 (1978).
Jager, Int. J. Electronics vol. 58:4:649-668 (1985).
Landauer, (1960) Journal of Applied Physics 31(3):479-484, Parametric Amplification Along Nonlinear Transmission Lines.
Proposal To The Defense Advanced Research Projects Agency For a Program of Research in "Millimeter-Wave Characterization of GaAs Devices and IC's", Sept. 1988.
Bloom David M.
Marsland Robert A.
Rodwell Mark
Hille Rolf
Saadat Mahshid
Stanford University
LandOfFree
Gallium arsenide monolithically integrated sampling head using e does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gallium arsenide monolithically integrated sampling head using e, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium arsenide monolithically integrated sampling head using e will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2100666