Gallium nitride base semiconductor device

Details Gallium nitride base semiconductor device Gallium nitride base semiconductor device

1992-11-04

1993-08-24

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

257 78, 257431, 257200, 257201, H01L 2714

Patent

active

052391884

ABSTRACT:
Disclosed are a gallium nitride type semiconductor device that has a single crystal of (Ga.sub.l-x Al.sub.x).sub.l-y In.sub.y N, which suppresses the occurrence of crystal defects and thus has very high crystallization and considerably excellent flatness, and a method of fabricating the same. The gallium nitride type semiconductor device comprises a silicon substrate, an intermediate layer consisting of a compound containing at least aluminum and nitrogen and formed on the silicon substrate, and a crystal layer of (Ga.sub.l-x Al.sub.x).sub.l-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, excluding the case of x=1 and y=0). According to the method of fabricating a gallium nitride base semiconductor device, a silicon single crystal substrate is kept at a temperature of 400 to 1300.degree. C. and is held in the atmosphere where a metaloganic compound containing at least aluminum and a nitrogen-containing compound are present to form a thin intermediate layer containing at least aluminum and nitrogen on a part or the entirety of the surface of the single crystal substrate, and then at least one layer or multiple layers of a single crystal of (Ga.sub.l- x Al.sub.x).sub.l-y In.sub.y N are formed on the intermediate layer.

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