Gallium nitride based compound semiconductor light-emitting...

Details Gallium nitride based compound semiconductor light-emitting... Gallium nitride based compound semiconductor light-emitting...

2006-01-31

2006-01-31

Nguyen, Tuan H. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S094000, C257S102000

Reexamination Certificate

active

06992331

ABSTRACT:
Disclosed are a GaN based compound semiconductor light emitting diode (LED) and a manufacturing method therefor. In the LED, a combination of a light extraction layer and an adaptive layer is formed over a multi-layer epitaxial structure,wherein the light extraction layer is a light transmissible impurity doped metal oxide and the adaptive layer is a Ni/Au layer used to enhance ohmic contact between the light extraction layer and the multi-layer epitaxial structure.

REFERENCES:
patent: 2002/0058351 (2002-05-01), Iwata et al.
patent: 2003/0077847 (2003-04-01), Yoo
patent: 2003/0122147 (2003-07-01), Sheu

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