Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Reexamination Certificate
2006-03-28
2006-03-28
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
C257S197000, C257S198000, C257S558000, C257S583000, C438S235000, C438S309000, C438S312000, C438S350000
Reexamination Certificate
active
07019383
ABSTRACT:
According to one exemplary embodiment, a gallium arsenide heterojunction bipolar transistor comprises a collector layer and a first spacer layer situated over the collector layer, where the first spacer layer is a high-doped P+ layer. For example, the first spacer layer may comprise GaAs doped with carbon. The gallium arsenide heterojunction bipolar transistor further comprises a base layer situated over the first spacer layer. The base layer may comprise, for example, a concentration of indium, where the concentration of indium is linearly graded in the base layer. The base layer may comprise InGaAsN, for example. The gallium arsenide heterojunction bipolar transistor further comprises an emitter layer situated over the base layer. The emitter layer may comprise, for example, InGaP.
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patent: 6563145 (2003-05-01), Chang et al.
patent: 2002/0163014 (2002-11-01), Welser et al.
Choi Kevin
Rushing Lance G.
Zampardi Peter J.
Farjami & Farjami LLP
Kang Donghee
Skyworks Solutions Inc.
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