Gallium indium nitride arsenide based epitaxial wafer, a...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

Reexamination Certificate

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C257S201000, C438S167000, C438S172000

Reexamination Certificate

active

06861679

ABSTRACT:
A hetero field effect transistor according to the present invention comprises an InP substrate, a channel layer provided on the InP substrate with a buffer layer disposed between the InP substrate and the channel layer, a spacer layer constituted by a semiconductor having a band gap larger than that of the channel layer formed to hetero-join to the channel layer, and a carrier supply layer formed to be adjacent to the spacer layer, wherein the channel layer comprises a predetermined semiconductor layer constituted by a compound semiconductor represented by a formula GaxIn1−xNyA1−yin which A is As or Sb, composition x satisfies 0≦x≦0.2, and composition y satisfies 0.03≦y≦0.10.

REFERENCES:
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patent: 6787822 (2004-09-01), Nuyen
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patent: 2002-94187 (2002-03-01), None
patent: 2003-289082 (2002-10-01), None
patent: 2003-197644 (2003-07-01), None
Hang, D.R. et al., “Shubnikov-de Haas oscillations of two-dimensional electron gas in and in AsN/InGaAs single quantum well”,Semiconductor Science and Technology, vol. 17, No. 9, Sep. 2002, pp. 999-1003.
Wang, Jyh-Shyang et al. , “Growth of InAsn/InGaAs (P) quantum wells on InP by gas source molecular beam epitaxy”.Journal of Vacuum Science&Technology B, vol. 19, No. 1 Jan./Feb. 2001, pp. 202-206.

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