Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2006-01-31
2006-01-31
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S194000, C257S195000, C257S197000
Reexamination Certificate
active
06992337
ABSTRACT:
A heterojunction bipolar transistor (HBT), comprises a collector formed over a substrate, a base formed over the collector, an emitter formed over the base, and a tunneling suppression layer between the collector and the base, the tunneling suppression layer fabricated from a material that is different from a material of the base and that has an electron affinity equal to or greater than an electron affinity of the material of the base.
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Bahl Sandeep
Moll Nicolas J.
Agilent Technologie,s Inc.
Dickey Thomas L.
Tran Minhloan
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