Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-01-22
1994-11-15
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 23, 257197, 257198, H01L 2972, H01L 29205
Patent
active
053650778
ABSTRACT:
A gain-stable npn heterojunction bipolar transistor includes a graded superlattice between its base and emitter consisting of multiple discrete periods, with each period having a layer of base material and another layer of emitter material. The thicknesses of the base material layers decrease while the thicknesses of the emitter material layers increase in discrete steps for each successive period from the base to the emitter. The thickness of each period is preferably at least about 20 Angstroms, with the superlattice including more than five periods. The superlattice is preferably doped to establish an electrical base-emitter junction at a desired location. The graded superlattice inhibits the diffusion of beryllium p dopant from the base into the emitter during transistor operation, thus stabilizing the device's gain and turn-on voltage.
REFERENCES:
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Low-Temperature Characterization of High-Current-Gain Graded-Emitter AlGaAs/GaAs Narrow-Base Heterojunction Bipolar Transistor, K. Ikossi-Anastasiou et al, IEEE Electron Device Letters 13 (1992) Aug., No. 8, New York, US.
Translation of Jpn. Pat. Appln. Kokai Publication No. 4-251934, Fujitsu Sep. 8, 1992.
Hafizi Madjid
McCray Loren G.
Metzger Robert A.
Stanchina William E.
Denson-Low W. K.
Duraiswamy V. D.
Hughes Aircraft Company
Jackson Jerome
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