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Aluminum-masked and radiantly-annealed group II-IV diffused regi

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Compound semiconductor laser

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Group III-nitride growth on Si substrate using oxynitride...

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III-V and II-VI compounds as template materials for growing...

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Integrated heterostructure of group II-VI semiconductor material

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Magnetic semiconductor material and method for preparation...

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Method and apparatus for single crystal gallium nitride...

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Ohmic contact on p-type GaN

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Ohmic contact to a II-VI compound semiconductor device and a...

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Ohmic contacts for p-type wide bandgap II-VI semiconductor...

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Optoelectronic semiconductor component

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Process for selective formation of II-VI group compound film

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Semiconductor device and manufacturing method thereof

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Semiconductor device and method for manufacturing the same

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Semiconductor device having a ZnCdSe buffer layer with a II-VI c

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Semiconductor device having high channel mobility and a high bre

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Semiconductor devices formed of III-nitride compounds,...

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Semiconductor light emitting element

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Semiconductor light-emitting device and production method thereo

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Thin-film electroluminescence device

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