Aluminum-masked and radiantly-annealed group II-IV diffused regi
Compound semiconductor laser
Group III-nitride growth on Si substrate using oxynitride...
III-V and II-VI compounds as template materials for growing...
Integrated heterostructure of group II-VI semiconductor material
Magnetic semiconductor material and method for preparation...
Method and apparatus for single crystal gallium nitride...
Ohmic contact on p-type GaN
Ohmic contact to a II-VI compound semiconductor device and a...
Ohmic contacts for p-type wide bandgap II-VI semiconductor...
Optoelectronic semiconductor component
Process for selective formation of II-VI group compound film
Semiconductor device and manufacturing method thereof
Semiconductor device and method for manufacturing the same
Semiconductor device having a ZnCdSe buffer layer with a II-VI c
Semiconductor device having high channel mobility and a high bre
Semiconductor devices formed of III-nitride compounds,...
Semiconductor light emitting element
Semiconductor light-emitting device and production method thereo
Thin-film electroluminescence device