Semiconductor device having a ZnCdSe buffer layer with a II-VI c

Details Semiconductor device having a ZnCdSe buffer layer with a II-VI c Semiconductor device having a ZnCdSe buffer layer with a II-VI c

1997-05-07

1998-06-30

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Ii-vi compound

257200, 257190, 257201, 257103, H01L 29267

Patent

active

057738505

ABSTRACT:
After the removal of a native oxide layer on a surface of an InP substrate, a ZnCdSe buffer layer is grown, and a ZnSeTe layer as a II-VI compound semiconductor layer containing Te is formed on the ZnCdSe buffer layer. This permits the ZnSeTe layer to grow two-dimensionally from directly after the start of growing such that its crystal quality is considerably improved. In this manner, a semiconductor device is attained which has above the InP substrate the II-VI compound semiconductor layer containing Te, which has such a high quality as to permit the semiconductor device to be used as a light emitting device.

REFERENCES:
patent: 5371409 (1994-12-01), McCaldin et al.
H. Okuyama et al., "Epitaxial growth of p-type ZnMgSSE", Appl. Phys. Lett., vol. 64, No. 7, Feb. 14, 1994, pp. 904-906.
I.W. Tao et al., "Doping of ZnTe by molecular beam epitaxy", Appl. Phys. Lett., vol. 64, No. 14, Apr. 4, 1994, pp. 1848-1849.
W. Faschinger et al., "Band structure engineering and doping of wide gap II-VI superlattices", Appl. Phys. Lett., vol. 66, No. 19, May 8, 1995, pp. 2516-2518.

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