Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Ii-vi compound
Patent
1999-08-02
2000-11-14
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Ii-vi compound
257103, H01L 2922, H01L 310256
Patent
active
061473650
ABSTRACT:
An optoelectronic semiconductor component has a radiation-emitting active layer sequence which is associated with at least one poorly dopable semiconductor layer of a first conductivity type. A heavily doped first degenerated junction layer of a first conductivity type and a heavily doped second degenerated junction layer of a second conductivity type opposite to the first conductivity type are provided between the poorly dopable semiconductor layer and a contact layer of the semiconductor body, the contact layer being associated with the poorly dopable semiconductor layer.
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Baron Thierry
Fischer Frank
Keim Markus
Landwehr Gottfried
Litz Thomas
Greenberg Laurence A.
Guay John
Infineon - Technologies AG
Lerner Herbert L.
Stemer Werner H.
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