Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Ii-vi compound
Patent
1992-05-12
1998-10-06
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Ii-vi compound
257744, 257461, H01L 2922, H01L 310256, H01L 310296, H01L 2348
Patent
active
058180729
ABSTRACT:
An ohmic contact to a p-type zinc selenide (ZnSe) layer in a Group II-VI semiconductor device, includes a zinc mercury selenide (Zn.sub.x Hg.sub.1-x Se) layer on the zinc selenide layer, a mercury selenide (HgSe) layer on the zinc mercury selenide layer and a conductor (such as metal) layer on the mercury selenide layer. The zinc mercury selenide and mercury selenide layers between the p-type zinc selenide and the conductor layer provide an ohmic contact by eliminating the band offset between the wide bandgap zinc selenide and the conductor. Step graded, linear graded, and parabolic graded layers of zinc mercury selenide may be provided. A layer of mercury selenide without the mercury zinc selenide layer may also provide an ohmic contact. The ohmic contact of the present invention produces nearly ideal voltage-current relation, so that high efficiency Group II-VI optoelectronic devices may be obtained. The integrated heterostructure is formed by epitaxially depositing the ohmic contact on the Group II-VI device. A removable overcoat layer may be formed on the Group II-VI device to allow room temperature atmospheric pressure transfer of the device from a zinc based deposition chamber to a mercury based deposition chamber, for deposition of the ohmic contact.
REFERENCES:
patent: 4315796 (1982-02-01), Nishizawa
patent: 4620058 (1986-10-01), Winterling et al.
patent: 4685979 (1987-08-01), Nishizawa
patent: 4755663 (1988-07-01), Derkits, Jr.
patent: 4801984 (1989-01-01), Woodall
patent: 4887274 (1989-12-01), Hayakawa et al.
patent: 4893154 (1990-01-01), Hirai et al.
patent: 5008891 (1991-04-01), Morita
patent: 5045897 (1991-09-01), Ahlgren
PCT International Search Report dated Aug. 25, 1993 of International Appl. No. PCT/US93/04342 filed Jul. 5, 1993.
Improved Ohmic Contacts For P-Type ZnSe and Related P-on-N Diode Structures, Y. Lansari et al., Appl. Phys. Lett. 61 (21), 23 Nov., 1992, pp. 2554-2556.
HgSe, a Highly Electronegative Stable Metallic Contact for Semiconductor Devices, Best et al., Applied Physics Letters, vol. 29, No. 7, pp. 433-434, 1976.
Blue (ZnSe) and Green (ZnSe.sub..alpha.9 Te.sub..alpha.1) Light Emitting Diodes, Ren et al. Journal of Crystal Growth, vol. 111, pp. 829-832, 1991.
Substitutional Doping of ZnSe Films, Ren. et al., Journal of Crystal Growth, vol. 111, pp. 772-775, 1991.
ZnSe Light-Emitting Diodes, Ren et al., Applied Physics Letters, vol. 57, No. 18, pp. 1901-1903, 1900.
Blue/Green pn Junction Electroluminescence From ZnSe-based Multiple Quantum-Well Structures, Xie et al., Applied Physics Letters, vol. 60, No. 4, pp. 463-465, 1992.
Noncontact Electrical Characterization of Low-Resistivity p-Type ZnSe:N Grown by Molecular Beam Epitaxy, Park et al., Applied Physical Letters, vol. 59, No. 16, pp. 1896-1898, 1991.
Blue-Green Laser Diodes, Haase et al., Applied Physics Letters, vol. 59, No. 11, pp. 1272-1274, 1991.
Blue-Green Injection Laser Diodes in (Zn,Cd)Se/ZnSe Quantum Wells, Jeon et al., Applied Physics Letters, vol. 59, No. 27, pp. 3619-3621, 1991.
Lattice-Matched Heterstructures as Schottky Barriers: HgSe/CdSe, Best et al., Journal of Vacuum Science and Technology, vol. 16, No. 5, pp. 1130-1133, 1979.
Elimination of Heterojunction Band Discontinuities by Modulation Doping, Schubert et al., Applied Physics Letters, vol. 60, No. 4, pp. 466-468, 1992.
ZnSe Based Multilayer pn Junctions as Efficient Light Emitting Diodes for Display Applications, Jeon et al., Applied Physics Letters, vol. 60, No. 7, pp. 892-894, 1992.
Blue and Green Diode Lasers in ZnSe-based Quantum Wells, Jeon et al., Appied Physics Letters, vol. 60, No. 17, pp. 2045-2047, 1992.
Room Temperature Blue Light Emitting p-n Diodes from Zn(S,Se)-based Multiple Quantum Well Structures, Xie et al., Applied Physics Letters, vol. 60, No. 16, pp. 1999-2001, 1992.
Highly Electronegative Contacts to Compound Semiconductors, Scranton et al., Journal of Vacuum Science Technology, vol. 14, No. 4, pp. 930-934, 1977.
Meier Stephen
North Carolina State University
LandOfFree
Integrated heterostructure of group II-VI semiconductor material does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated heterostructure of group II-VI semiconductor material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated heterostructure of group II-VI semiconductor material will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-81146