Process for selective formation of II-VI group compound film

Details Process for selective formation of II-VI group compound film Process for selective formation of II-VI group compound film

1992-01-09

1994-08-02

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Ii-vi compound

257289, 257347, 257410, 257614, H01L 29161, H01L 2712

Patent

active

053348648

ABSTRACT:
A process for selective formation of a II-VI group compound film comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group II atoms of periodic table and a starting material for supplying the group VI atoms of periodic table, on a substrate having a non-nucleation surface (S.sub.NDS) with small nucleation density and a nucleation surface (S.sub.NDL) with larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and a large area sufficient for a number of nuclei to be formed and forming selectively a II-VI group compound film only on said nucleation surface (S.sub.NDL).

REFERENCES:
patent: 3697342 (1972-10-01), Cuomo
patent: 4066481 (1978-01-01), Manasevit et al.
patent: 4216037 (1980-08-01), Katoda et al.
patent: 4239788 (1980-12-01), Beck
patent: 4467521 (1984-08-01), Spooner et al.
patent: 4557037 (1985-12-01), Hanoka et al.
patent: 4615904 (1986-10-01), Ehrlich et al.
patent: 4637127 (1987-01-01), Kurogi et al.
patent: 5100691 (1992-03-01), Tokunaga et al.

Affiliated with

Also associated with

Rating

Process for selective formation of II-VI group compound film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for selective formation of II-VI group compound film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for selective formation of II-VI group compound film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-66727