Semiconductor light-emitting device and production method thereo

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Ii-vi compound

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257 94, H01L 2922, H01L 310256, H01L 310296, H01L 3300

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active

057058318

ABSTRACT:
According to one aspect of the invention, a crystal-growing method for forming a II-VI single crystalline semiconductor expressed by Zn.sub.1-x Cd.sub.x Se (where 0<x<0.35) is provided. The crystal-growing method includes a step of epitaxially growing the II-VI single crystalline semiconductor on a substrate by: supplying a II element Zn onto the substrate by using a molecular beam from a ZnSe compound source and a molecular beam from a Zn elemental source; supplying a II element Cd onto the substrate by using a molecular beam from a CdSe compound source; and supplying a VI element Se onto the substrate by using a molecular beam from a ZnSe compound source.

REFERENCES:
patent: 5291506 (1994-03-01), Ahn
Okuyama et al; Journal of Crystal Growth, 117, pp. 139-143, 1192, "Epitaxial Growth of ZnMgSSE on GaAs Substrate by Molecular Beam Epitaxy."
Itoh et al, Jpn. J. Appl. Phys., vol. 32, pp. L 1530-L 1532, Oct. 1993 "491-nm ZnCeSe/ZnSe/ZnMgSSe SCH Laser Diode With a Low Operating Voltage".
Xie et al, Appl. Phys. Lett. 60(16), Apr. 1992, "Room Temperature Blue Light Emitting p-n Diodes from Zn(S,Se)-Based Multiple Quantum Well Structures."
Xie et al, Appl. Phys. Lett 60(4), pp. 463-465 Jan. 1992, "Blue/Green pn Junction Electroluminescence from ZnSe-Based Multiple Quantum-Well Structures."
Ohkawa et al, Japanese Journal of Applied Physics, vol. 30, No. 2A, pp. L 152-L 155, Feb. 1991, "Characteristics of p-type ZnSe Layers . . . "
Ohkawa et al, J. Appl. Phys. 62(8), Oct. 1987, "Charactaeristics of Cl-Doped ZnSe Layers Grown by Molecular-Beam Epitaxy."

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