Ohmic contact on p-type GaN

Details Ohmic contact on p-type GaN Ohmic contact on p-type GaN

2009-01-20

2010-12-07

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Ii-vi compound

C257S076000, C257S201000, C257S200000, C257S614000, C257SE29096, C257SE29094, C438S597000, C438S603000, C438S604000

Reexamination Certificate

active

07847297

ABSTRACT:
An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.

REFERENCES:
patent: 5585649 (1996-12-01), Ishikawa et al.
patent: 5604356 (1997-02-01), Shiraishi
patent: 5786603 (1998-07-01), Rennie et al.
patent: 6046464 (2000-04-01), Schetzina
patent: 6069367 (2000-05-01), Tomiya
patent: 2005/0173728 (2005-08-01), Saxler

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