Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Ii-vi compound
Reexamination Certificate
2006-09-05
2006-09-05
Chaudhari, Chandra (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Ii-vi compound
C438S003000, C438S095000
Reexamination Certificate
active
07102171
ABSTRACT:
A magnetic semiconductor material having magnetization characteristics and a method for preparing the same is provided.In the method for preparing the magnetic semiconductor, Mn is vapor-deposited at a thickness of 200 to 300 Å onto a CdGeP2single crystal (2) while the CdGeP2single crystal (2) is maintained at a temperature of about 390° C. in a molecular beam epitaxy apparatus (1). The Mn-deposited CdGeP2single crystal is heated at a temperature of about 510° C. for 1 hour. Thus, a magnetic semiconductor comprising CdMnGeP2and having magnetization characteristics at room temperature is prepared.
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Medvedkin et al., “Room Temperature Ferromagnetism in Novel Diluted Magnetic Semiconductor CdMnGeP2”, Oct. 2000, Jpn. J. Appl. Phys., vol. 39, pp. L949-L951.
Ishibashi Takayuki
Medvedkin Gennadiy
Sato Katsuaki
Chaudhari Chandra
Japan Science and Technology Corporation
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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