Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Ii-vi compound
Reexamination Certificate
2007-04-10
2007-04-10
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Ii-vi compound
C257S019000, C257S020000, C257S190000, C257S191000, C257S192000, C257S614000, C257S616000, C438S933000
Reexamination Certificate
active
10883295
ABSTRACT:
An assembly comprising a semiconductor substrate having a first lattice constant, an intermediate layer having a second lattice constant formed on the semiconductor substrate, and a virtual substrate layer having a third lattice constant formed on the intermediate layer. The intermediate layer comprises one of a combination of III–V elements and a combination of II–VI elements. The second lattice constant has a value that is approximately between the values of the first lattice constant and the third lattice constant.
REFERENCES:
patent: 3963539 (1976-06-01), Kemlage et al.
patent: 4994867 (1991-02-01), Biegelsen
patent: 5183778 (1993-02-01), Takasaki
Chow Loren
Shaheen Mohamad
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