Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Ii-vi compound
Reexamination Certificate
2009-08-05
2011-11-01
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Ii-vi compound
C257S043000, C257S614000, C257SE29296
Reexamination Certificate
active
08049225
ABSTRACT:
An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.
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Asakuma.N. et al., “Crystallization
Akimoto Kengo
Miyairi Hidekazu
Miyanaga Akiharu
Shiraishi Kojiro
Yamazaki Shunpei
Mandala Victor A
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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