Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Ii-vi compound
Patent
1991-10-03
1993-11-23
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Ii-vi compound
257 79, 257 98, 257631, 257637, 257646, H01L 3300
Patent
active
052647145
ABSTRACT:
A thin-film electroluminescence device has transparent electrodes formed on a transparent substrate, a lower dielectric layer formed on the substrate having the transparent electrodes, a luminescent layer formed on the lower dielectric layer, an upper dielectric layer formed on the luminescent layer, and back electrodes formed on the upper dielectric layer. At least one of the upper and lower dielectric layers includes a SiN:H film formed in contact with the luminescent layer by a plasma chemical vapor deposition method. The SiN:H film contains N--H bonds of 1.2.times.10.sup.22 /cm.sup.3 or less to control an amount of change in emission-start voltage to 30 V or less.
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Dharmadhikari, "Characterization of Plasma-Deposited Silicon Nitride Coating Used For Integrated Circuit Encapsulation", Thin Solid Films, 153 (1987) pp. 459-468.
Nguyen, "Effect of Si-H and N-H Bonds on Electrical Properties of Plasma Deposited Silicon Nitride and Oxynitride Films", Journal of Electronic Materials, vol. 16, No. 4, 1987, pp. 275-281.
Nakaya Hiroaki
Ogura Takashi
Yamashita Takuo
Yoshida Masaru
Bowers Courtney A.
James Andrew J.
Sharp Kabushiki Kaisha
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