Semiconductor light emitting element

Details Semiconductor light emitting element Semiconductor light emitting element

1991-07-03

1993-12-28

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Ii-vi compound

257 76, 257 86, 257103, 257200, H01L 4900, H01L 3300, H01L 29161, H01L 29205

Patent

active

052742512

ABSTRACT:
A semiconductor light emitting element with a high light-emitting efficiency, which is constituted in such a way that, of the composition of its GaN and AlN epitaxial layer, part of N is substituted by P, thus ensuring good lattice-matching with the substrate crystal, ZnO.

REFERENCES:
patent: 3982261 (1976-09-01), Antypas
patent: 4081764 (1978-03-01), Christmann et al.
patent: 4340966 (1982-07-01), Akiba et al.
patent: 5041883 (1991-08-01), Lindquist et al.
patent: 5097298 (1992-03-01), Ehara
European Search Report.
Patent Abstracts of Japan cited in the European Search Report.

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