Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Ii-vi compound
Reexamination Certificate
2006-05-09
2006-05-09
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Ii-vi compound
C257S096000, C438S037000, C438S047000
Reexamination Certificate
active
07042011
ABSTRACT:
A compound semiconductor laser of a III group nitride semiconductor of the present invention includes a first cladding layer104of a first conduction type formed on a substrate101, an active layer106formed on the first cladding layer, a second cladding layer108of a second conduction type formed on the active layer106, and a buried layer110formed on the second cladding layer108, the buried layer having an opening portion for constricting a current in a selected region of the active layer, wherein an upper portion of the second cladding layer108has a ridge portion, the ridge portion residing in the opening portion of the buried layer110, and the buried layer110does not substantially absorb light output from the active layer106, and the buried layer has a refractive index which is approximately identical with that of the second cladding layer108.
REFERENCES:
patent: 4691321 (1987-09-01), Motegi et al.
patent: 5583880 (1996-12-01), Shakuda
patent: 5734670 (1998-03-01), Ono et al.
patent: 5742629 (1998-04-01), Nishikawa et al.
patent: 5812576 (1998-09-01), Bour
patent: 5822347 (1998-10-01), Yokogawa et al.
patent: 6055255 (2000-04-01), Suyama et al.
patent: 01-184973 (1989-07-01), None
patent: 05-003376 (1993-01-01), None
patent: 07-235723 (1995-09-01), None
patent: 08-056055 (1996-02-01), None
patent: 08-097507 (1996-04-01), None
patent: 09-270569 (1996-10-01), None
patent: 08-018159 (1997-01-01), None
Nakamura et al., (Jan. 1996). “InGaN-Based Multi-Quantum-Well-Structure Laser Diodes”,Jpn. J. Appl. Phys. vol. 35, Part 2, No. 1B, L74-L76.
Nakamura et al., (Sep. 1996). “Ridge-Geometry InGaN Multi-Quantum-Well-Structure Laser Diodes”,Appl. Phys. Lett. 69(10):1477-1479.
Fourson George
Sharp Kabushiki Kaisha
Toledo Fernando L.
LandOfFree
Compound semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Compound semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound semiconductor laser will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3538115