Semiconductor device having high channel mobility and a high bre

Details Semiconductor device having high channel mobility and a high bre Semiconductor device having high channel mobility and a high bre

1996-04-24

2000-11-21

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Ii-vi compound

257213, 257 57, 257 58, 257 59, 257291, 257294, 257326, 257347, 257360, 257363, 257401, 257153, 257341, 257147, 438268, 438546, 438931, 438272, 438274, 438545, H01L 2922

Patent

active

061506710

ABSTRACT:
A transistor of SiC having a drain and a highly doped substrate layer is formed on the drain. A highly n type buffer layer may optionally be formed on the substrate layer. A low doped n-type drift layer, a p-type base layer, a high doped n-type source region layer and a source are formed on the substrate layer. An insulating layer with a gate electrode is arranged on top of the base layer and extends substantially laterally from at least the source region layer to a n-type layer. When a voltage is applied to the gate electrode, a conducting inversion channel is formed extending substantially laterally in the base layer at an interface of the p-type base layer and the insulating layer. The p-type base layer is low doped in a region next to the interface to the insulating layer at which the inversion channel is formed and highly doped in a region thereunder next to the drift layer.

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