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Selected: G

GaAs device having a strain-free c-doped layer

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Having graded composition
Patent

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GaAs FET with resistive AlGaAs

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent

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GaAs substrate with compositionally graded AlGaAsSb buffer for f

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Patent

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GaAs substrate with Sb buffering for high in devices

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate

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GaAs-based semiconductor field-effect transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate

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GaAs-InGaAs high electron mobility transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent

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GaInP epitaxial stacking structure and fabrication method...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate

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GaInP stacked layer structure and field-effect transistor...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Between different group iv-vi or ii-vi or iii-v compounds...
Reexamination Certificate

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GaInP/GaInAs/GaAs modulation-compositioned channel field-effect

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent

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Gallium antimonide complementary HFET

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate

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Gallium antimonide complementary HFET

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent

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Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP)...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate

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Gallium indium nitride arsenide based epitaxial wafer, a...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate

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Gallium nitride device substrate containing a lattice...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate

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Gallium nitride heterojunction schottky diode

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Between different group iv-vi or ii-vi or iii-v compounds...
Reexamination Certificate

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Gallium nitride material devices and thermal designs thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate

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Gallium nitride material devices including an...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate

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Gallium nitride material structures including substrates and...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate

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Gallium nitride material structures including substrates and...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate

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Gallium nitride material transistors and methods associated...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate

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