Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2006-07-04
2006-07-04
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S109000, C257S155000, C257S194000, C257S280000
Reexamination Certificate
active
07071498
ABSTRACT:
Gallium nitride material devices and methods of forming the same are provided. The devices include an electrode-defining layer. The electrode-defining layer typically has a via formed therein in which an electrode is formed (at least in part). Thus, the via defines (at least in part) dimensions of the electrode. In some cases, the electrode-defining layer is a passivating layer that is formed on a gallium nitride material region.
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Brown Jeffrey D.
Johnson Jerry W.
Therrien Robert J.
Vescan Andrei
Nguyen Cuong
Nitronex Corporation
Wolf Greenfield & Sacks P.C.
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