GaAs device having a strain-free c-doped layer

Details GaAs device having a strain-free c-doped layer GaAs device having a strain-free c-doped layer

1992-02-11

1993-07-27

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Having graded composition

257197, 257609, 257591, H01L 29161

Patent

active

052312984

ABSTRACT:
A device made by a process of making strain-free, heavily carbon-doped p-type epitaxial layers for use in high performance devices and at least one such device so made. The process essentially includes the epitaxial deposition of a strain-free, carbon-doped p-type layer in a GaAs HBT device to form the base layer thereof in a manner that includes the balancing of the strain of the crystal lattice structure caused by the carbon doping by co-doping the base layer with an isovalent and isoelectric dopant. The co-doping also improves device performance. It also effects alloy hardening, which inhibits further defect formation, improves mobility and carrier lifetime of the base layer and, by narrowing the energy gap, it improves ohmic contact formation.

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