GaAs FET with resistive AlGaAs

Details GaAs FET with resistive AlGaAs GaAs FET with resistive AlGaAs

1992-03-20

1994-04-05

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257280, 257288, 257471, 257622, 437 38, 437133, 437176, 437203, H01L 2980, H01L 29161, H01L 21265, H01L 2144

Patent

active

053007956

ABSTRACT:
This is a FET device and the device comprises: a buffer layer 30; a channel layer 32 of doped narrow bandgap material over the buffer layer; and a resistive layer 34 of low doped wide bandgap material over the channel layer, the doping of the channel layer and the resistive layer being such that no significant transfer of electrons occurs between the resistive layer and the channel layer. This is also a method of making a FET device.

REFERENCES:
patent: 4424525 (1984-01-01), Mimura
patent: 4641161 (1987-02-01), Kim et al.
patent: 4987462 (1991-01-01), Kim et al.
patent: 5091759 (1992-02-01), Shih et al.
IEEE Electron Device Letters, vol. 7, #11, pp. 638-639 by Kim et al. Nov. 1986.
IEEE Electron Device Letters, vol. 5, #11 pp. 494-495 by Kim et al. Nov. 1984.

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