GaAs substrate with Sb buffering for high in devices

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S013000, C257S014000, C257S015000, C257S021000, C257S022000, C257S191000

Reexamination Certificate

active

06888179

ABSTRACT:
GaAs substrates with compositionally graded buffer layers for matching lattice constants with high-Indium semiconductor materials such as quantum well infrared photoconductor devices and thermo photo voltaic devices are disclosed.

REFERENCES:
patent: 4963949 (1990-10-01), Wanlass et al.
patent: 5047822 (1991-09-01), Little, Jr. et al.
patent: 5068867 (1991-11-01), Hasenberg et al.
patent: 5519529 (1996-05-01), Ahearn et al.
patent: 5770868 (1998-06-01), Gill et al.
patent: 5883564 (1999-03-01), Partin
patent: 5917201 (1999-06-01), Ming-Jiunn et al.
patent: 5965899 (1999-10-01), Little, Jr.
patent: 6043426 (2000-03-01), DePoy et al.
patent: 6150604 (2000-11-01), Freundlich et al.
patent: 6323545 (2001-11-01), Michii
patent: 6326639 (2001-12-01), Schneider et al.
patent: 6355939 (2002-03-01), Dodd
patent: 6399971 (2002-06-01), Shigematsu et al.
patent: 6410917 (2002-06-01), Choi
patent: 6420728 (2002-07-01), Razeghi
patent: 6423896 (2002-07-01), Keegan
patent: 20010019849 (2001-09-01), Manabe et al.
patent: WO 9217908 (1992-10-01), None
patent: WO 0007248 (2000-02-01), None
patent: WO 0016409 (2000-03-01), None
Wang, C.A., et al, GaInAsSb Materials for Thermophotovoltaic Devices, Lockheed Martin Corporation, Schenectady, NY.
Donetsky, D. et al, Reduction of Surface Recombination Velocity in GaInAsSb/AlGaAsSb/GaSb TPV Devices, Lockheed Martin Corporation, Schenectady, NY.
Watkins, S.P. et al, High mobility InAs grown on GaAs substrates using tertiarybutylarsine and trimethylindium, Appl. Phys. Lett., Feb. 13, 1995, vol. 66 (7).
Gee, James M., Selective Emitters Using Photonic Crystals for Thermopholovoltaic Energy Conversion, 29thIEEE Phototvoltaic Specialists Conference, May 2002, New Orleans, LA.
Shellenbarger, Zane, et al, GaInAsSb and InAsSbP Photodetectors for Mid-Infrared Wavelengths, Presented at Aerosense '98, Apr. 1998, Orlando, FL.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

GaAs substrate with Sb buffering for high in devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with GaAs substrate with Sb buffering for high in devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and GaAs substrate with Sb buffering for high in devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3455552

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.