Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Between different group iv-vi or ii-vi or iii-v compounds...
Reexamination Certificate
2009-02-18
2010-11-30
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Between different group iv-vi or ii-vi or iii-v compounds...
C257S471000, C257S472000
Reexamination Certificate
active
07842974
ABSTRACT:
A gallium nitride based semiconductor diode includes a substrate, a GaN layer formed on the substrate, an AlGaN layer formed on the GaN layer where the GaN layer and the AlGaN layer forms a cathode region of the diode, a metal layer formed on the AlGaN layer forming a Schottky junction therewith where the metal layer forms an anode electrode of the diode, and a high barrier region formed in the top surface of the AlGaN layer and positioned under an edge of the metal layer. The high barrier region has a higher bandgap energy than the AlGaN layer or being more resistive than the AlGaN layer.
REFERENCES:
patent: 7229866 (2007-06-01), Zhu et al.
patent: 7372080 (2008-05-01), Goto et al.
patent: 7436039 (2008-10-01), Zhu et al.
patent: 2006/0108659 (2006-05-01), Yanagihara et al.
patent: 2007/0210335 (2007-09-01), Ikeda et al.
patent: 2008/0142837 (2008-06-01), Sato et al.
patent: 2009/0200576 (2009-08-01), Saito et al.
patent: 2010/0075082 (2010-03-01), Komada et al.
Z. Z. Bandić et al., “High voltage (450 V) GaN schottky rectifiers,” Applied Physics Letters, vol. 74, No. 9, Mar. 1, 1999, pp. 1266-1268.
Seiko Yoshida et al., “A New GaN Based Field Effect Schottky Barrier Diode with a Very Low On-Voltage Operation,” Proceedings of 2004 International Symposium on Power Semiconductor Devices & ICs, Kitakyushu, pp. 323-326.
T. G. Zhu et al., “High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching,” Applied Physics Letters, vol. 77, No. 18, Oct. 30, 2000, pp. 2918-2920.
Alpha & Omega Semiconductor, Inc.
Cook Carmen C.
Patent Law Group LLP
Pham Long
LandOfFree
Gallium nitride heterojunction schottky diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gallium nitride heterojunction schottky diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium nitride heterojunction schottky diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4197656