GaAs substrate with compositionally graded AlGaAsSb buffer for f

Details GaAs substrate with compositionally graded AlGaAsSb buffer for f GaAs substrate with compositionally graded AlGaAsSb buffer for f

1995-11-08

1998-06-23

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

257191, H01L 29205

Patent

active

057708681

ABSTRACT:
Semiconductor devices made in highindium-content semiconductor material have advantageous properties, but similar substrate materials are hard to handle. A buffer layer makes a lattice-constant transition between a GaAs substrate and a high-indium epitaxially deposited semiconductor such as those lattice-matched to InP. The buffer layer is an epitaxial layer including atoms of two Group III elements, and atoms of two Group V elements, with the ratio of the atoms of at least one group varied along the depth of the buffer layer, in a manner which makes a transition of the lattice constant between that of the substrate and the high-Indium semiconductor material. The Group III elements are gallium and aluminum, and the Group V elements are arsenic and antimony.

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