GaAs-InGaAs high electron mobility transistor

Details GaAs-InGaAs high electron mobility transistor GaAs-InGaAs high electron mobility transistor

1995-09-08

1997-07-29

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257 20, H01L 29778, H01L 29205

Patent

active

056524404

ABSTRACT:
A GaAs-InGaAs high electron mobility transistor includes: a GaAs substrate; a GaAs buffer layer overlaying on the GaAs substrate; a graded InGaAs channel overlaying on the GaAs layer; a GaAs spacer layer overlaying on the graded InGaAs channel layer; a .delta.-doping layer overlaying on the GaAs spacer layer; a GaAs cap layer overlaying on the .delta.-doping layer; drain and source terminals overlaying on the GaAs cap layer and contacting the graded InGaAs channel layer; and a gate terminal overlaying on the GaAs cover layer and located between the drain terminal and the source terminal. One kind of modified transistor uses the symmetric channel .delta.-doping structure to replace the graded InGaAs channel of the transistor.

REFERENCES:
patent: 5371387 (1994-12-01), Ando
patent: 5404032 (1995-04-01), Sawada et al.
Sawada et al, IEEE Elec Dev. Lett vol. 14 No. 7 Jul. 1993 "A New Two-Mode . . . Applications" pp. 354-356.
Hsu et al, IEEE Trans. on Elec. Dev. vol. 41 No. 3 Mar. 1994 pp. 456-457 "A High Performance . . . MOCVD".

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