Gallium nitride material devices and thermal designs thereof

Details Gallium nitride material devices and thermal designs thereof Gallium nitride material devices and thermal designs thereof

2007-08-15

2010-06-29

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S194000, C257S289000, C257SE29249, C438S285000

Reexamination Certificate

active

07745848

ABSTRACT:
Gallium nitride material devices and methods associated with the devices are described. The devices may be designed to provide enhanced thermal conduction and reduced thermal resistance. The increased thermal conduction through and out of the gallium nitride devices enhances operability of the devices, including providing excellent RF operation, reliability, and lifetime.

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