Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2011-08-09
2011-08-09
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C330S277000
Reexamination Certificate
active
07994540
ABSTRACT:
Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
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Borges Ricardo M.
Brown Jeffrey D.
Chaudhari Apurva D.
Cook, Jr. James W.
Hanson Allen W.
Farjami & Farjami LLP
International Rectifier Corporation
Prenty Mark
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