Gallium nitride device substrate containing a lattice...

Details Gallium nitride device substrate containing a lattice... Gallium nitride device substrate containing a lattice...

2007-08-14

2011-10-18

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S018000, C257S028000, C257SE29193, C257SE31035

Reexamination Certificate

active

08039869

ABSTRACT:
A gallium nitride device substrate comprises a layer of gallium nitride containing an additional lattice parameter altering element located over a substitute substrate.

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patent: WO-2005/004212 (2005-01-01), None
Morita, Daisuke “High Output Power 365nm Ultraviolet Light Emitting Diode of GaN-Free Structure”,The Japan Society of Applied Physics; XP-001162409, (Dec. 15, 2002).

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