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Write line design in MRAM

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Write margin improvement for SRAM cells with SiGe stressors

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Write once read only memory with large work function...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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X-ROM semiconductor memory device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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X-shaped semiconductor capacitor structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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X-Y address type solid state image pickup device and method...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
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Yield enhancement technique for integrated circuit processing to

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Zero capacitance bondpad utilizing active negative capacitance

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Zero power memory cell with reduced threshold voltage

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Zero thermal budget manufacturing process for MOS-technology pow

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Zero Threshold Voltage pFET and method of making same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Zero-cost non-volatile memory cell with write and erase...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Zirconium and/or hafnium oxynitride gate dielectric

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Zirconium and/or hafnium silicon-oxynitride gate dielectric

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Zirconium silicon oxide films

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Zirconium titanium oxide films

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Zr x Hf y Sn 1-x-y O 2 films as high k gate dielectrics

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Zr— Sn—Ti—O films

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Zr— Sn—Ti—O films

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Zr-substituted BaTiO 3 films

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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