X-shaped semiconductor capacitor structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S532000

Reexamination Certificate

active

07859039

ABSTRACT:
A semiconductor capacitor structure includes a first metal layer, a second metal layer, a first set of via plugs, a second set of via plugs, and a dielectric layer. The first metal layer includes a first portion, a plurality of parallel-arranged second portions, a third portion, and a plurality of parallel-arranged fourth portions. The second metal layer includes a fifth section, a plurality of sixth sections, a seventh section, and a plurality of eighth sections. The first set of via plugs electrically connects the plurality of second sections to the plurality of sixth sections. The second set of via plugs electrically connects the plurality of fourth sections to the plurality of eighth sections.

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patent: 6542351 (2003-04-01), Kwang
patent: 6625006 (2003-09-01), Aram et al.
patent: 6784050 (2004-08-01), Sutardja et al.
patent: 6819542 (2004-11-01), Tsai et al.
patent: 6885543 (2005-04-01), Aram et al.
patent: 6974744 (2005-12-01), Aram et al.
patent: 6980414 (2005-12-01), Sutardja
patent: 2007/0057344 (2007-03-01), Lee
patent: I222089 (2004-10-01), None

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