Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-22
2008-07-22
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S532000, C361S311000
Reexamination Certificate
active
10931341
ABSTRACT:
A dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI4precursor and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing titanium and oxygen onto a substrate surface by atomic layer deposition using a TiI4precursor, depositing zirconium and oxygen onto a substrate surface by atomic layer deposition, and depositing tin and oxygen onto a substrate surface by atomic layer deposition form the Zr—Sn—Ti—O dielectric layer. Dielectric films containing Zr—Sn—Ti—O formed by atomic layer deposition using TiI4are thermodynamically stable such that the Zr—Sn—Ti—O will have minimal reactions with a silicon substrate or other structures during processing.
REFERENCES:
patent: 3381114 (1968-04-01), Nakanuma
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4215156 (1980-07-01), Dalal et al.
patent: 4333808 (1982-06-01), Bhattacharyya et al.
patent: 4399424 (1983-08-01), Rigby
patent: 4413022 (1983-11-01), Suntola et al.
patent: 4590042 (1986-05-01), Drage
patent: 4647947 (1987-03-01), Takeoka et al.
patent: 4767641 (1988-08-01), Kieser et al.
patent: 4920071 (1990-04-01), Thomas
patent: 4993358 (1991-02-01), Mahawili
patent: 5006192 (1991-04-01), Deguchi
patent: 5496597 (1996-03-01), Soininen et al.
patent: 5595606 (1997-01-01), Fujikawa et al.
patent: 5698022 (1997-12-01), Glassman et al.
patent: 5735960 (1998-04-01), Sandhu et al.
patent: 5795808 (1998-08-01), Park
patent: 5801105 (1998-09-01), Yano et al.
patent: 5810923 (1998-09-01), Yano et al.
patent: 5828080 (1998-10-01), Yano et al.
patent: 5840897 (1998-11-01), Kirlin et al.
patent: 5912797 (1999-06-01), Schneemeyer et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5923056 (1999-07-01), Lee et al.
patent: 5950925 (1999-09-01), Fukunaga et al.
patent: 6010969 (2000-01-01), Vaarstra
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6020024 (2000-02-01), Maiti et al.
patent: 6027961 (2000-02-01), Maiti et al.
patent: 6034015 (2000-03-01), Lin et al.
patent: 6057271 (2000-05-01), Kenjiro et al.
patent: 6059885 (2000-05-01), Ohashi et al.
patent: 6060755 (2000-05-01), Ma et al.
patent: 6063705 (2000-05-01), Vaartstra
patent: 6093944 (2000-07-01), VanDover
patent: 6110529 (2000-08-01), Gardiner et al.
patent: 6161500 (2000-12-01), Kopacz et al.
patent: 6171900 (2001-01-01), Sun
patent: 6174809 (2001-01-01), Kang et al.
patent: 6194237 (2001-02-01), Kim et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 6206972 (2001-03-01), Dunham
patent: 6207522 (2001-03-01), Hunt et al.
patent: 6207589 (2001-03-01), Ma et al.
patent: 6211035 (2001-04-01), Moise et al.
patent: 6217645 (2001-04-01), Vaartstra
patent: 6225168 (2001-05-01), Gardner et al.
patent: 6225237 (2001-05-01), Vaartstra
patent: 6270835 (2001-08-01), Hunt et al.
patent: 6273951 (2001-08-01), Vaartstra
patent: 6274937 (2001-08-01), Ahn et al.
patent: 6281042 (2001-08-01), Ahn et al.
patent: 6281144 (2001-08-01), Cleary et al.
patent: 6291341 (2001-09-01), Sharan et al.
patent: 6296943 (2001-10-01), Watanabe et al.
patent: 6297103 (2001-10-01), Ahn et al.
patent: 6297539 (2001-10-01), Ma et al.
patent: 6300203 (2001-10-01), Buynoski et al.
patent: 6302964 (2001-10-01), Umotoy et al.
patent: 6303481 (2001-10-01), Park
patent: 6313035 (2001-11-01), Sandhu et al.
patent: 6348386 (2002-02-01), Gilmer
patent: 6350704 (2002-02-01), Ahn et al.
patent: 6368398 (2002-04-01), Vaartstra
patent: 6368941 (2002-04-01), Chen et al.
patent: 6380579 (2002-04-01), Nam et al.
patent: 6383861 (2002-05-01), Gonzalez et al.
patent: 6387712 (2002-05-01), Yano et al.
patent: 6391769 (2002-05-01), Lee et al.
patent: 6395650 (2002-05-01), Callegari et al.
patent: 6407427 (2002-06-01), Oh
patent: 6420279 (2002-07-01), Ono et al.
patent: 6432779 (2002-08-01), Hobbs et al.
patent: 6433993 (2002-08-01), Hunt et al.
patent: 6441417 (2002-08-01), Zhang et al.
patent: 6444039 (2002-09-01), Nguyen
patent: 6444592 (2002-09-01), Ballantine et al.
patent: 6445023 (2002-09-01), Vaartstra et al.
patent: 6448192 (2002-09-01), Kaushik
patent: 6451641 (2002-09-01), Halliyal et al.
patent: 6451695 (2002-09-01), Sneh
patent: 6454912 (2002-09-01), Ahn et al.
patent: 6455717 (2002-09-01), Vaartstra
patent: 6458701 (2002-10-01), Chae et al.
patent: 6465334 (2002-10-01), Buynoski et al.
patent: 6465853 (2002-10-01), Hobbs et al.
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6495436 (2002-12-01), Ahn et al.
patent: 6495458 (2002-12-01), Marsh
patent: 6504214 (2003-01-01), Yu et al.
patent: 6514820 (2003-02-01), Ahn et al.
patent: 6514828 (2003-02-01), Ahn et al.
patent: 6521911 (2003-02-01), Parsons et al.
patent: 6527866 (2003-03-01), Matijasevic et al.
patent: 6531324 (2003-03-01), Hsu et al.
patent: 6531354 (2003-03-01), Maria et al.
patent: 6534420 (2003-03-01), Ahn et al.
patent: 6537613 (2003-03-01), Senzaki et al.
patent: 6538330 (2003-03-01), Forbes
patent: 6541079 (2003-04-01), Bojarczuk, Jr. et al.
patent: 6541280 (2003-04-01), Kaushik et al.
patent: 6541353 (2003-04-01), Sandhu et al.
patent: 6544846 (2003-04-01), Ahn et al.
patent: 6544875 (2003-04-01), Wilk
patent: 6551893 (2003-04-01), Zheng et al.
patent: 6551929 (2003-04-01), Kori et al.
patent: 6552383 (2003-04-01), Ahn et al.
patent: 6559472 (2003-05-01), Sandhu et al.
patent: 6570248 (2003-05-01), Ahn et al.
patent: 6573199 (2003-06-01), Sandhu et al.
patent: 6586349 (2003-07-01), Jeon et al.
patent: 6586792 (2003-07-01), Ahn et al.
patent: 6596636 (2003-07-01), Sandhu et al.
patent: 6602720 (2003-08-01), Hsu et al.
patent: 6608378 (2003-08-01), Ahn et al.
patent: 6613656 (2003-09-01), Li
patent: 6613695 (2003-09-01), Pomarede et al.
patent: 6620670 (2003-09-01), Song et al.
patent: 6620752 (2003-09-01), Messing et al.
patent: 6627260 (2003-09-01), Derderian et al.
patent: 6627503 (2003-09-01), Ma et al.
patent: 6630383 (2003-10-01), Ibok et al.
patent: 6632279 (2003-10-01), Ritala et al.
patent: 6638859 (2003-10-01), Sneh et al.
patent: 6639267 (2003-10-01), Eldridge
patent: 6642573 (2003-11-01), Halliyal et al.
patent: 6645882 (2003-11-01), Halliyal et al.
patent: 6652924 (2003-11-01), Sherman
patent: 6660660 (2003-12-01), Haukka et al.
patent: 6661058 (2003-12-01), Ahn et al.
patent: 6673701 (2004-01-01), Marsh et al.
patent: 6674138 (2004-01-01), Halliyal et al.
patent: 6682602 (2004-01-01), Vaartstra
patent: 6686212 (2004-02-01), Conley, Jr. et al.
patent: 6696332 (2004-02-01), Visokay et al.
patent: 6699747 (2004-03-01), Ruff et al.
patent: 6709989 (2004-03-01), Ramdani et al.
patent: 6710538 (2004-03-01), Ahn et al.
patent: 6713329 (2004-03-01), Wagner et al.
patent: 6713846 (2004-03-01), Senzaki
patent: 6720221 (2004-04-01), Ahn et al.
patent: 6728092 (2004-04-01), Hunt et al.
patent: 6730575 (2004-05-01), Eldridge
patent: 6750066 (2004-06-01), Cheung et al.
patent: 6754108 (2004-06-01), Forbes
patent: 6756292 (2004-06-01), Lee et al.
patent: 6767582 (2004-07-01), Elers
patent: 6767795 (2004-07-01), Ahn et al.
patent: 6770536 (2004-08-01), Wilk et al.
patent: 6774050 (2004-08-01), Ahn et al.
patent: 6777353 (2004-08-01), Putkonen
patent: 6778441 (2004-08-01), Forbes et al.
patent: 6780704 (2004-08-01), Raaijmakers et al.
patent: 6784101 (2004-08-01), Yu et al.
patent: 6787370 (2004-09-01), Forbes
patent: 6787413 (2004-09-01), Ahn
patent: 6790791 (2004-09-01), Ahn et al.
patent: 6794709 (2004-09-01), Ahn et al.
patent: 6800567 (2004-10-01), Cho
patent: 6803326 (2004-10-01), Ahn et al.
patent: 6812100 (2004-11-01), Ahn et al.
patent: 6812157 (2004-11-01), Gadgil
patent: 6821862 (2004-11-01), Cho
patent: 6821873 (2004-11-01), Visokay et al.
patent: 6831315 (2004-12-01), Raaijmakers et al.
patent: 6833285 (2004-12-01), Ahn et al.
patent: 6833308 (2004-12-01), Ahn et al.
patent: 6835111 (2004-12-01), Ahn et al.
patent: 6844203 (2005-01-01), Ahn et al.
patent: 6852167 (2005-02-01), Ahn
patent: 6858120 (2005-02-01), Ahn et al.
patent: 6858444 (2005-02-01), Ahn et al.
patent: 68588
Ahn Kie Y.
Forbes Leonard
Micro)n Technology, Inc.
Schwegman Lundberg & Woessner, P.A.
Wojciechowicz Edward
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