Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-27
2005-09-27
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S318000, C365S185100, C365S184000
Reexamination Certificate
active
06949784
ABSTRACT:
A memory device includes a coupling capacitor and a field-effect transistor. The coupling capacitor is formed from (1) a first dopant region in a second dopant region on a substrate, (2) a gate dielectric atop the first dopant region, and (3) a first gate conductor atop the gate dielectric. The coupling capacitor has the first gate conductor coupled to a second gate conductor of the field-effect transistor. A voltage can be applied to the second dopant region to isolate the coupling capacitor from the substrate by reverse biasing a PN junction formed between the first dopant region and the second dopant region.
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Hsia David C.
Micrel Inc.
Patent Law Group LLP
Prenty Mark V.
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