Zirconium titanium oxide films

Details Zirconium titanium oxide films Zirconium titanium oxide films

2011-01-04

2011-01-04

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29015, C257SE29309, C257SE21423, C257SE21456

Reexamination Certificate

active

07863667

ABSTRACT:
Dielectric layers having an atomic layer deposited oxide containing titanium and zirconium and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Pulsing a titanium-containing precursor onto a substrate, and pulsing a zirconium-containing precursor to form an oxide containing Zr and Ti by atomic layer deposition provides a dielectric layer with a relatively high dielectric constant as compared with silicon oxide. A zirconium-containing precursor to form the oxide containing Zr and Ti can include zirconium tertiary-butoxide.

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