Zr x Hf y Sn 1-x-y O 2 films as high k gate dielectrics

Details Zr x Hf y Sn 1-x-y O 2 films as high k gate dielectrics Zr x Hf y Sn 1-x-y O 2 films as high k gate dielectrics

2011-01-25

2011-01-25

Nhu, David (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000, C257S760000, C257SE21170, C257SE21126, C257SE21127, C257SE21278, C257SE21293, C257SE21632, C257SE21645

Reexamination Certificate

active

07875912

ABSTRACT:
The use of atomic layer deposition (ALD) to form a nanolaminate dielectric of zirconium oxide (ZrO2), hafnium oxide (HfO2) and tin oxide (SnO2) acting as a single dielectric layer with a formula of ZrxHfySn1-x-yO2, and a method of fabricating such a dielectric layer is described that produces a reliable structure with a high dielectric constant (high k). The dielectric structure is formed by depositing zirconium oxide by atomic layer deposition onto a substrate surface using precursor chemicals, followed by depositing hafnium oxide onto the substrate using precursor chemicals, followed by depositing tin oxide onto the substrate using precursor chemicals, and repeating to form the thin laminate structure. Such a dielectric may be used as a gate insulator, a capacitor dielectric, or as a tunnel insulator in non-volatile memories, because the high dielectric constant (high k) provides the functionality of a much thinner silicon dioxide film.

REFERENCES:
patent: 5912797 (1999-06-01), Schneemeyer et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6451695 (2002-09-01), Sneh
patent: 6495436 (2002-12-01), Ahn et al.
patent: 6500499 (2002-12-01), Senzaki et al.
patent: 6514828 (2003-02-01), Ahn et al.
patent: 6534420 (2003-03-01), Ahn et al.
patent: 6537613 (2003-03-01), Senzaki et al.
patent: 6608378 (2003-08-01), Ahn et al.
patent: 6661058 (2003-12-01), Ahn et al.
patent: 6673701 (2004-01-01), Marsh et al.
patent: 6730163 (2004-05-01), Vaartstra
patent: 6730164 (2004-05-01), Vaartstra et al.
patent: 6746930 (2004-06-01), Yang et al.
patent: 6767795 (2004-07-01), Ahn et al.
patent: 6784049 (2004-08-01), Vaartstra
patent: 6787413 (2004-09-01), Ahn
patent: 6794284 (2004-09-01), Vaartstra
patent: 6844203 (2005-01-01), Ahn et al.
patent: 6863725 (2005-03-01), Vaartstra et al.
patent: 6893984 (2005-05-01), Ahn et al.
patent: 6900122 (2005-05-01), Ahn et al.
patent: 6921702 (2005-07-01), Ahn et al.
patent: 6953730 (2005-10-01), Ahn et al.
patent: 6958300 (2005-10-01), Vaartstra et al.
patent: 6958302 (2005-10-01), Ahn et al.
patent: 6960538 (2005-11-01), Ahn et al.
patent: 6967154 (2005-11-01), Meng et al.
patent: 6967159 (2005-11-01), Vaartstra
patent: 6984592 (2006-01-01), Vaartstra
patent: 6995081 (2006-02-01), Vaartstra
patent: 7026694 (2006-04-01), Ahn et al.
patent: 7030042 (2006-04-01), Vaartstra et al.
patent: 7041609 (2006-05-01), Vaartstra
patent: 7045205 (2006-05-01), Sager
patent: 7077902 (2006-07-01), Vaartstra
patent: 7081421 (2006-07-01), Ahn et al.
patent: 7087481 (2006-08-01), Vaartstra et al.
patent: 7101813 (2006-09-01), Ahn et al.
patent: 7112485 (2006-09-01), Vaartstra
patent: 7115166 (2006-10-01), Vaartstra et al.
patent: 7115528 (2006-10-01), Vaartstra et al.
patent: 7122464 (2006-10-01), Vaartstra
patent: 7125815 (2006-10-01), Vaartstra
patent: 7169673 (2007-01-01), Ahn et al.
patent: 7196007 (2007-03-01), Vaartstra
patent: 7205218 (2007-04-01), Ahn et al.
patent: 7235501 (2007-06-01), Ahn et al.
patent: 7250367 (2007-07-01), Vaartstra et al.
patent: 7253122 (2007-08-01), Vaartstra
patent: 7271077 (2007-09-01), Vaartstra et al.
patent: 7294556 (2007-11-01), Vaartstra
patent: 7300870 (2007-11-01), Vaartstra
patent: 7323423 (2008-01-01), Brask et al.
patent: 7332442 (2008-02-01), Vaartstra et al.
patent: 7365027 (2008-04-01), Ahn et al.
patent: 7368402 (2008-05-01), Vaartstra
patent: 7374617 (2008-05-01), Vaartstra
patent: 7393736 (2008-07-01), Ahn et al.
patent: 7402876 (2008-07-01), Ahn et al.
patent: 7410917 (2008-08-01), Ahn et al.
patent: 7410918 (2008-08-01), Vaartstra
patent: 7531869 (2009-05-01), Ahn et al.
patent: 7611959 (2009-11-01), Ahn et al.
patent: 2002/0024080 (2002-02-01), Derderian et al.
patent: 2002/0024108 (2002-02-01), Lucovsky et al.
patent: 2002/0025628 (2002-02-01), Derderian et al.
patent: 2002/0046705 (2002-04-01), Sandhu et al.
patent: 2002/0192974 (2002-12-01), Ahn et al.
patent: 2002/0192975 (2002-12-01), Ahn
patent: 2003/0043637 (2003-03-01), Forbes et al.
patent: 2003/0045078 (2003-03-01), Ahn et al.
patent: 2003/0045082 (2003-03-01), Eldridge et al.
patent: 2003/0048666 (2003-03-01), Eldridge et al.
patent: 2003/0175411 (2003-09-01), Kodas et al.
patent: 2003/0176065 (2003-09-01), Vaartstra
patent: 2003/0200917 (2003-10-01), Vaartstra
patent: 2003/0207032 (2003-11-01), Ahn et al.
patent: 2003/0207540 (2003-11-01), Ahn et al.
patent: 2003/0207593 (2003-11-01), Derderian et al.
patent: 2003/0227033 (2003-12-01), Ahn et al.
patent: 2003/0228747 (2003-12-01), Ahn et al.
patent: 2004/0040494 (2004-03-01), Vaartstra et al.
patent: 2004/0040501 (2004-03-01), Vaartstra
patent: 2004/0043151 (2004-03-01), Vaartstra
patent: 2004/0043541 (2004-03-01), Ahn et al.
patent: 2004/0043569 (2004-03-01), Ahn et al.
patent: 2004/0043600 (2004-03-01), Vaartstra
patent: 2004/0043604 (2004-03-01), Vaartstra
patent: 2004/0043625 (2004-03-01), Vaartstra et al.
patent: 2004/0043630 (2004-03-01), Vaartstra et al.
patent: 2004/0043632 (2004-03-01), Vaartstra
patent: 2004/0043633 (2004-03-01), Vaartstra
patent: 2004/0043634 (2004-03-01), Vaartstra
patent: 2004/0043635 (2004-03-01), Vaartstra
patent: 2004/0043636 (2004-03-01), Vaartstra et al.
patent: 2004/0065255 (2004-04-01), Yang et al.
patent: 2004/0094801 (2004-05-01), Liang et al.
patent: 2004/0110391 (2004-06-01), Ahn et al.
patent: 2004/0126954 (2004-07-01), Vaartstra et al.
patent: 2004/0144980 (2004-07-01), Ahn et al.
patent: 2004/0152254 (2004-08-01), Vaartstra et al.
patent: 2004/0164357 (2004-08-01), Ahn et al.
patent: 2004/0175882 (2004-09-01), Ahn et al.
patent: 2004/0183108 (2004-09-01), Ahn
patent: 2004/0185654 (2004-09-01), Ahn
patent: 2004/0187968 (2004-09-01), Vaartstra
patent: 2004/0197946 (2004-10-01), Vaartstra et al.
patent: 2004/0214399 (2004-10-01), Ahn et al.
patent: 2004/0219746 (2004-11-01), Vaartstra et al.
patent: 2004/0222476 (2004-11-01), Ahn et al.
patent: 2004/0262700 (2004-12-01), Ahn et al.
patent: 2005/0009266 (2005-01-01), Vaartstra
patent: 2005/0009368 (2005-01-01), Vaartstra
patent: 2005/0009370 (2005-01-01), Ahn
patent: 2005/0019978 (2005-01-01), Vaartstra et al.
patent: 2005/0020017 (2005-01-01), Ahn et al.
patent: 2005/0023594 (2005-02-01), Ahn et al.
patent: 2005/0023624 (2005-02-01), Ahn et al.
patent: 2005/0023625 (2005-02-01), Ahn et al.
patent: 2005/0023626 (2005-02-01), Ahn et al.
patent: 2005/0026349 (2005-02-01), Forbes et al.
patent: 2005/0028733 (2005-02-01), Vaartstra
patent: 2005/0029547 (2005-02-01), Ahn et al.
patent: 2005/0029604 (2005-02-01), Ahn et al.
patent: 2005/0029605 (2005-02-01), Ahn et al.
patent: 2005/0032292 (2005-02-01), Ahn et al.
patent: 2005/0032360 (2005-02-01), Vaartstra
patent: 2005/0037563 (2005-02-01), Ahn
patent: 2005/0054165 (2005-03-01), Ahn et al.
patent: 2005/0077519 (2005-04-01), Ahn et al.
patent: 2005/0124171 (2005-06-01), Vaartstra
patent: 2005/0124175 (2005-06-01), Ahn et al.
patent: 2005/0136689 (2005-06-01), Vaartstra
patent: 2005/0158973 (2005-07-01), Ahn et al.
patent: 2005/0160981 (2005-07-01), Vaartstra et al.
patent: 2005/0164521 (2005-07-01), Ahn et al.
patent: 2005/0215015 (2005-09-01), Ahn et al.
patent: 2005/0218462 (2005-10-01), Ahn et al.
patent: 2005/0221006 (2005-10-01), Vaartstra
patent: 2005/0227442 (2005-10-01), Ahn et al.
patent: 2005/0287804 (2005-12-01), Vaartstra
patent: 2005/0287819 (2005-12-01), Vaartstra et al.
patent: 2006/0024975 (2006-02-01), Ahn et al.
patent: 2006/0043504 (2006-03-01), Ahn et al.
patent: 2006/0046521 (2006-03-01), Vaartstra et al.
patent: 2006/0048711 (2006-03-01), Vaartstra
patent: 2006/0148180 (2006-07-01), Ahn et al.
patent: 2006/0172485 (2006-08-01), Vaartstra
patent: 2006/0176645 (2006-08-01), Ahn et al.
patent: 2006/0177975 (2006-08-01), Ahn et al.
patent: 2006/0223337 (2006-10-01), Ahn et al.
patent: 2006/0231017 (2006-10-01), Vaartstra
patent: 2006/0244082 (2006-11-01), Ahn et al.
patent: 2006/0244100 (2006-11-01), Ahn et al.
patent: 2006/0252244 (2006-11-01), Vaartstra et al.
patent: 2006/0252279 (2006-11-01), Vaartstra
patent: 2006/0258175 (2006-11-01), Vaartstra et al.
patent: 2006/0261389 (2006-11-01), Vaartstra
patent: 2006/0270147 (2006-11-01), Ahn et al.
patent: 2006/

Affiliated with

Also associated with

Rating

Zr x Hf y Sn 1-x-y O 2 films as high k gate dielectrics does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Zr x Hf y Sn 1-x-y O 2 films as high k gate dielectrics, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Zr x Hf y Sn 1-x-y O 2 films as high k gate dielectrics will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2709597