X-Y address type solid state image pickup device and method...

Details X-Y address type solid state image pickup device and method... X-Y address type solid state image pickup device and method...

2007-11-13

2007-11-13

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S184000, C257S187000, C257S231000, C257S257000, C257S291000

Reexamination Certificate

active

10192409

ABSTRACT:
In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

REFERENCES:
patent: 6169319 (2001-01-01), Malinovich et al.
patent: 6229165 (2001-05-01), Sakai et al.
patent: 6316814 (2001-11-01), Nagata et al.
patent: 6448104 (2002-09-01), Watanabe

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