Zr-substituted BaTiO 3 films

Details Zr-substituted BaTiO 3 films Zr-substituted BaTiO 3 films

2011-07-26

2011-07-26

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27104, C257SE29272

Reexamination Certificate

active

07985995

ABSTRACT:
The use of atomic layer deposition (ALD) to form a zirconium substituted layer of barium titanium oxide (BaTiO3), produces a reliable ferroelectric structure for use in a variety of electronic devices such as a dielectric in nonvolatile random access memories (NVRAM), tunable dielectrics for multi layer ceramic capacitors (MLCC), infrared sensors and electro-optic modulators. The structure is formed by depositing alternating layers of barium titanate and barium zirconate by ALD on a substrate surface using precursor chemicals, and repeating to form a sequentially deposited interleaved structure of desired thickness and composition. Such a layer may be used as the gate insulator of a MOSFET, or as a capacitor dielectric. The properties of the dielectric may be tuned by adjusting the percentage of zirconium to titanium to optimize properties such as a dielectric constant, Curie point, film polarization, ferroelectric property and a desired relaxor response.

REFERENCES:
patent: 5032559 (1991-07-01), McSweeney et al.
patent: 5672378 (1997-09-01), Maher et al.
patent: 6005274 (1999-12-01), Gardner et al.
patent: 6188100 (2001-02-01), Hermes
patent: 6495436 (2002-12-01), Ahn et al.
patent: 6514828 (2003-02-01), Ahn et al.
patent: 6534420 (2003-03-01), Ahn et al.
patent: 6767795 (2004-07-01), Ahn et al.
patent: 6844203 (2005-01-01), Ahn et al.
patent: 6893984 (2005-05-01), Ahn et al.
patent: 6900122 (2005-05-01), Ahn et al.
patent: 6921702 (2005-07-01), Ahn et al.
patent: 6953730 (2005-10-01), Ahn et al.
patent: 6958302 (2005-10-01), Ahn et al.
patent: 6960538 (2005-11-01), Ahn et al.
patent: 6989573 (2006-01-01), Ahn et al.
patent: 6999297 (2006-02-01), Klee et al.
patent: 2001/0055192 (2001-12-01), Nakano et al.
patent: 2002/0145845 (2002-10-01), Hunt et al.
patent: 2002/0192974 (2002-12-01), Ahn et al.
patent: 2003/0043637 (2003-03-01), Forbes et al.
patent: 2003/0045078 (2003-03-01), Ahn et al.
patent: 2003/0160329 (2003-08-01), Lee et al.
patent: 2003/0207032 (2003-11-01), Ahn et al.
patent: 2003/0207540 (2003-11-01), Ahn et al.
patent: 2003/0227033 (2003-12-01), Ahn et al.
patent: 2003/0228747 (2003-12-01), Ahn et al.
patent: 2004/0043541 (2004-03-01), Ahn et al.
patent: 2004/0043569 (2004-03-01), Ahn et al.
patent: 2004/0110348 (2004-06-01), Ahn et al.
patent: 2004/0110391 (2004-06-01), Ahn et al.
patent: 2004/0144980 (2004-07-01), Ahn et al.
patent: 2004/0175882 (2004-09-01), Ahn et al.
patent: 2004/0214399 (2004-10-01), Ahn et al.
patent: 2004/0262700 (2004-12-01), Ahn et al.
patent: 2005/0020017 (2005-01-01), Ahn et al.
patent: 2005/0054165 (2005-03-01), Ahn et al.
patent: 2005/0285226 (2005-12-01), Lee
patent: 2006/0024975 (2006-02-01), Ahn et al.
patent: 2006/0060857 (2006-03-01), Mardilovich et al.
patent: 2007/0035030 (2007-02-01), Horton et al.
patent: 2007/0131142 (2007-06-01), Borland et al.
Highly insulative barium zirconate-titanate thin films prepared by rf magnetron sputtering for dynamic random access memory applications , T. B. Wu, C. M. Wu, and M. L. Chen , Appl. Phys. Lett., vol. 69, No. 18, Oct. 28, 1996, pp. 2659-2661.
Borland et al., Barium Titanate Thin Films with Titanium Partially Substituted by Zirconium, Tin or Hafnium, Oct. 21, 2005. Provisinal Application.
Ahn, Kie Y., “ALD of Amorphous Lanthanide Doped Tiox Films”, U.S. Appl. No. 11/092,072, filed Mar. 29, 2005.
Ahn, Kie Y., “Atomic Layer Deposited Hafnium Tantalum Oxide Dielectrics”, U.S. Appl. No. 11/029,757, filed Jan. 5, 2005.
Ahn, Kie Y., “Atomic Layer Deposited Lanthanum Aluminum Oxide Dielectric Layer”, U.S. Appl. No. 10/930,167, filed Aug. 31, 2004.
Ahn, Kie Y., “Atomic Layer Deposited Lanthanum Hafnium Oxide Dielectrics”, U.S. Appl. No. 11/010,529, filed Dec. 13, 2004
Ahn, Kie Y., “Atomic Layer Deposited Titanium Aluminum Oxide Films”, U.S. Appl. No. 10/931 533, filed Aug. 31, 2004.
Ahn, Kie Y., “Atomic Layer Deposited Titanium Silicon Oxide Films”, U.S. Appl. No. 11/093,104, filed Mar. 29, 2005.
Ahn, Kie Y., “Atomic Layer Deposited Zirconium Silicon Oxide Films”, U.S. Appl. No. 11/117,121, filed Apr. 28, 2005.
Ahn, Kie Y., “Atomic Layer Deposition of a Ruthenium Layer to a Lanthanide Oxide Dielectric Layer”, U.S. Appl. No. 11/117,125; filed Apr. 28, 2005.
Ahn, Kie Y., “Atomic Layer Deposition of CEO2/AL2O3 Films as Gate Dielectrics”, U.S. Appl. No. 11/055,380, filed Feb. 10, 2005.
Ahn, Kie Y., “Atomic Layer Deposition of DY-Doped HFO2 Films as Gate Dielectrics”, U.S. Appl. No. 11/053,577; filed Feb. 8, 2005, 04-1179.
Ahn, Kie Y., “Atomic Layer Deposition of GDSCO3 Films as Gate Dielectrics”, U.S. Appl. No. 11/215,507, filed Aug. 30, 2005.
Ahn, Kie Y., “Atomic Layer Deposition of Hf3N4/HfO2 Films as Gate Dielectrics”, U.S. Appl. No. 11/063,717, filed Feb. 23, 2005.
Ahn, Kie Y., “Atomic Layer Deposition of Zr3N4/ZrO2 Films as Gate Dielectrics”, U.S. Appl. No. 11/058,563, filed Feb. 15, 2005.
Ahn, Kie Y., “Atomic Layer Deposition of ZRX HFY SN1-X-Y O2 Films as High K Gate Dielectrics”, U.S. Appl. No. 11/215,530, filed Aug. 29, 2005.
Ahn, Kie Y., “Cobalt Titanium Oxide Dielectric Films”, U.S. Appl. No. 11/216,958, filed Aug. 31, 2005.
Ahn, Kie Y., “Gallium Lanthanide Oxide Films”, U.S. Appl. No. 11/329,025.
Ahn, Kie Y., “Hafnium Tantalum Titanium Oxide Films”, U.S. Appl. No. 11/297,741, filed Dec. 8, 2005.
Ahn, Kie Y., “Hafnium Titanium Oxide Films”, U.S. Appl. No. 11/140,643, filed May 27, 2005.
Ahn, Kie Y., “Hybrid ALD-CVD of PrXOY/ZrO2 Films as Gate Dielectrics”, U.S. Appl. No. 11/010,766, filed Dec. 13, 2004.
Ahn, Kie Y., “Iridium / Zirconium Oxide Structure”, U.S. Appl. No. 11/152,759, filed Jun. 14 2005.
Ahn, Kie Y., “Lanthanide Yttrium Aluminum Oxide Dielectric Films”, U.S. Appl. No. 11/297,567, filed Dec. 8, 2005.
Ahn, Kie Y., “Lanthanum Aluminum Oxynitride Dielectric Films”, U.S. Appl. No. 11/216,474, filed Aug. 31, 2005.
Ahn, Kie Y., “Magnesium Titanium Oxide Films”, U.S. Appl. No. 11/189,075, filed Jul. 25, 2005.
Ahn, Kie Y., “Ruthenium Gate for a Lanthanide Oxide Dielectric Layer”, U.S. Appl. No. 10/926,812, filed Aug. 26, 2004.
Ahn, Kie Y., “Zirconium-Doped Gadolinium Oxide Films”, U.S. Appl. No. 11/215,578, filed Aug. 29, 2005.
Carroll, K R., et al., “Microwave measurement of the dielectric constant of SrOm5 ferroelectric thin films”,Applied Physics Letters(1993).
Endo, Kazuhiko , “Metal Organic Atomic Layer Deposition of High-k Gate Dielectrics Using Plasma Oxidation”,Japanese Journal of Applied Physics, 42, (2003),L685-L687.
Farhi, R , “A Raman and dielectric study of ferroelecric Ba(Ti1-xZrx)03 ceramics”The European Physics Journal, B 9, (1999),599-604.
Gui, Jianian , et al., “The effect ofi Zr on the microstructure of Ba(Ti1—yZry) O3 thin films prepared by chemical-solution deposition”,Materials Letters, 35, (1998),275-379.
Gust, M C., et al., “Crystallization of Sol Gel-Derived Barium Strontium Titanate Thin Films”,Journal of the American Ceramic Society, 84 (5), (2001),1087-1092.
Halder, S , et al., “Fabrication and electrical characterisation of Zr-substituted BaTiO 3 thin films”,Applied Physics A81, (2005),25-29.
Hennings, D , et al., “Diffuse ferroelectric phase transitions in Ba (Ti 1-y Zry) O3 ceramics”,Journal of the American Ceramic Society, (1992),539 -.
Ishii, Hiroyuki , “Growth and electrical properties of atomic-layer deposited ZrO2/Si-nitride stack gate dielectrics”,Journal of Applied Physics, 95(2), (Jan. 15, 2004),536-542.
Jonsson, A. K., “Dielectric Permittivity and Intercalation Parameters of Li Ion Intercalated Atomic Layer Deposited ZrO2”,Journal of the Electrochemical Society, vol. 151 ,No. 3, (2004), F54-F58.
Leskela, M , “ALD precursor chemistry: Evolution and future cha

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