Zr— Sn—Ti—O films

Details Zr— Sn—Ti—O films Zr— Sn—Ti—O films

2008-07-22

2008-07-22

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S532000, C361S311000

Reexamination Certificate

active

07402876

ABSTRACT:
A dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI4precursor and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing titanium and oxygen onto a substrate surface by atomic layer deposition using a TiI4precursor, depositing zirconium and oxygen onto a substrate surface by atomic layer deposition, and depositing tin and oxygen onto a substrate surface by atomic layer deposition form the Zr—Sn—Ti—O dielectric layer. Dielectric films containing Zr—Sn—Ti—O formed by atomic layer deposition using TiI4are thermodynamically stable such that the Zr—Sn—Ti—O will have minimal reactions with a silicon substrate or other structures during processing.

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