Zirconium silicon oxide films

Details Zirconium silicon oxide films Zirconium silicon oxide films

2008-05-20

2011-12-27

Nguyen, Thinh T (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C257S410000, C257SE29300, C438S216000, C438S261000

Reexamination Certificate

active

08084808

ABSTRACT:
Electronic apparatus and systems include structures having a dielectric layer containing a zirconium silicon oxide film. A zirconium silicon oxide film may be disposed in an integrated circuit, as well as in a variety of other electronic devices. Additional apparatus, systems, and methods are disclosed.

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