LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes;

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Low defect axially grown single crystal silicon carbide

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state

Low defect density diamond single crystal and a process for the

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Low defect density epitaxial wafer and a process for the...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Low defect density regions of self-interstitial dominated...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Low defect density self-interstitial dominated silicon

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Low defect density silicon

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Low defect density silicon and a process for producing low...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Low defect density silicon having a vacancy-dominated core...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...

Low defect density vacancy dominated silicon

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Low defect density, self-interstitial dominated silicon

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Low defect density/arbitrary lattice constant heteroepitaxial la

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...

Low hydrogen-content silicon crystal with few micro-defects caus

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...

Low hydrogen-content silicon crystal with few micro-defects caus

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Low indium content quantum well structures

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Low micropipe 100 mm silicon carbide wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Low micropipe 100 mm silicon carbide wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

Low oxygen heater

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Low temperature epitaxial growth of quaternary wide bandgap...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Low temperature ion-beam assisted deposition methods for realizi