Low hydrogen-content silicon crystal with few micro-defects caus

Details Low hydrogen-content silicon crystal with few micro-defects caus Low hydrogen-content silicon crystal with few micro-defects caus

1994-05-26

1996-04-09

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

117 3, 117 20, 117932, C30B 3302

Patent

active

055051570

ABSTRACT:
The present invention is to manufacture a low hydrogen-concentration silicon crystal having less micro defects caused from oxygen precipitation generated during an annealing process. Particularly, a silicon crystal including hydrogen concentration lower than 0.55.times.10.sup.11 cm.sup.-3, where the hydrogen concentration dependency is small and the micro defect density is less, may be used for a substrate of semiconductor devices. The low hydrogen-concentration silicon substrate is manufactured by measuring the hydrogen concentrations in a silicon crystal and in a hydrogen-doped silicon crystal having a known hydrogen concentration, where both the silicon crystals have been annealed at an equal condition so as to generated thermal donors therein, and by comparing thus measured hydrogen concentrations. The known hydrogen-doped silicon crystal has been prepared by a hydrogen-diffusing annealing in a hydrogen containing atmosphere, where the hydrogen concentration is calculated from the hydrogen partial pressure and the temperature of the annealing.

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A. R. Brown et al., Enhanced thermal donor formation in silicon exposed to a hydrogen plasma; Semicond. Sci. Technol. 3 (1988).
M. Stavola et al., Oxygen Aggregation and Diffusivity in Silicon; Electrochem. Soc. 1983.
R. C. Newman et al.; Enhanced Thermal Donor formation and oxygen diffusion in silicon exposed to atomic hydrogen; Electrochem. Soc. 1990.
H. J. Stein et al.; Hydrogen-accelerated thermal donor formation in Czochralski silicon; Appl. Phys. Lett.; Jan. 1, 1990.
R. C. Newman et al., Hydrogen diffusion and the catalysis of enhanced oxygen diffusion in silicon at temperature below 500.degree. C.; J. Appl. Phys., Sep. 15, 1991.

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