Low defect density diamond single crystal and a process for the

Details Low defect density diamond single crystal and a process for the Low defect density diamond single crystal and a process for the

1995-12-05

1999-06-01

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

117929, 423446, C30B 2904

Patent

active

059085037

ABSTRACT:
A colorless, transparent low defect density, synthetic type IIa diamond single crystal, in which the etch pits due to needle-shaped defects are at most 3.times.10.sup.5 pieces/cm.sup.2, and which can be applied to uses needing high crystallinity of diamond, for example, monochromators, semiconductor substrates, spectroscopic crystals in X-ray range, electronic materials, etc., is provided by a process for the production of the colorless, transparent low defect density, synthetic diamond single crystal by growing new diamond crystal on a seed crystal of diamond by the temperature gradient method which comprises using a crystal defect-free diamond single crystal, as a seed crystal of diamond, and optionally subjecting to a heat treatment in a non-oxidizing atmosphere at a low pressure and a temperature of 1100 to 1600.degree. C.

REFERENCES:
patent: 4042673 (1977-08-01), Strong
patent: 4125770 (1978-11-01), Lang
patent: 4836881 (1989-06-01), Satoh et al.
patent: 5328548 (1994-07-01), Tsuji et al.
patent: 5419276 (1995-05-01), Anthony et al.
patent: 5503104 (1996-04-01), Spiro
H. Sumiya et al., "Development of High-Purity Synthetic Diamonds", Sumitomo Denki, No. 145, XP 000612898, pp. 113-117, 1994.
H. Sumiya et al., "Development of High-Purity Synthetic Diamonds", Sumitomo Electric Technical Review, No. 69, XP 000612899, pp. 69-73, Jan. 1995.
W. Banholzer et al., Thin Solid Films, vol. 212, Nos. 1/2, pp. 1-10, May 15, 1992.

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