Low defect density vacancy dominated silicon

Details Low defect density vacancy dominated silicon Low defect density vacancy dominated silicon

1998-04-09

1999-07-06

Utech, Benjamin

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

117 15, 117 20, 117201, 117932, C30B 3306

Patent

active

059193026

ABSTRACT:
The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect and which is substantially free of agglomerated vacancy intrinsic point defects, wherein the first axially symmetric region comprises the central axis or has a width of at least about 15 mm, and a process for the preparation thereof.

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