Search
Selected: All

GaN selective growth on SiC substrates by ammonia-source MBE

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

GaN single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

GaN system compound semiconductor and method for growing...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Garnet single crystal for substrate of magneto-optic element and

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Gas anti-solvent recrystallization process

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Gas diffusion electrodes, membrane-electrode assemblies and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Gas diffusion electrodes, membrane-electrode assemblies and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Generic process for preparing a crystalline oxide upon a group I

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Geometric shape control of thin film ferroelectrics and resultin

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Graphite heater for producing single crystal, apparatus for...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Grip arranged on a pull shaft of a crystal pulling system

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Group II-VI semiconductor laser and method for the manufacture t

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Group III nitride compound semiconductor device and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Group III nitride crystal substrate, method of its...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Group III nitride crystal, crystal growth process and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Group III nitride crystal, crystal growth process and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Group III nitride semiconductor substrate

Single-crystal – oriented-crystal – and epitaxy growth processes; – Inorganic containing single-crystal (e.g. – compound – mixture – co – Nitride containing (e.g. – gan – cbn) {c30b 29/38}
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Group III nitride semiconductor substrate

Single-crystal – oriented-crystal – and epitaxy growth processes; – Inorganic containing single-crystal (e.g. – compound – mixture – co – Nitride containing (e.g. – gan – cbn) {c30b 29/38}
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Group III-nitride crystal, manufacturing method thereof,...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Forming a platelet shape or a small diameter – elongate,...
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Group III-nitride semiconductor crystal and manufacturing...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0
  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.