Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1997-06-04
2000-02-29
Bos, Steven
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 54, 117945, 423263, C30B 1500, C30B 1900, C30B 2928, C01F 1700
Patent
active
060304499
ABSTRACT:
A garnet crystal for growing a substrate is used in manufacturing a magneto-optic element. The garnet is manufactured by a Czochralski method and has a chemical structure represented by La.sub.8-(x+y) Yb.sub.x Ga.sub.y O.sub.12 wherein x has the range 1.0.ltoreq.x.ltoreq.3.0, y has the range 2.5.ltoreq.y.ltoreq.4.5, and (x+y) has the range 5.0.ltoreq.(x+y).ltoreq.6.5. The garnet crystal is grown from a melt prepared by heating a mixture of gadolinium oxide, ytterbium oxide, and gallium oxide in a crucible, the oxides being mixed together in a weight proportion such that the atomic proportion is La:Yb:Ga=3:p:q wherein p has the range 1.0.ltoreq.p.ltoreq.3.0 and q has the range 2.0.ltoreq.q.ltoreq.4.5.
REFERENCES:
Kochurikhin, et al., "The investigation of ions distribution in . . . garnet single crystals" Nippon Kessho Seicho Gakkaishi, 23(3), p. 203, Jul. 1996.
Kochurikhin, et al., "The investigation of ions distribution in . . . garnet single crystals" J. Cryst. Growth, 178(4), pp. 645-647, 1997.
Mill, et al., "Unusual coordination numbers of ions in a garnet structure" Sov. Phys. Crystallogr., 18(1), pp. 76-79, Jul. 1973.
Fukuda Tsuguo
Takeda Norio
Bos Steven
Mitsubishi Gas Chemical Company Inc.
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