Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-07-19
2005-07-19
Hiteshew, Felisa (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S092000
Reexamination Certificate
active
06918961
ABSTRACT:
A group III nitride compound semiconductor device has a substrate and an AlN single crystal layer formed on the substrate. The AlN single crystal layer has a thickness of from 0.5 to 3 μm and has a substantially flat surface. The half-value width of an X-ray rocking curve of the AlN single crystal layer is not longer than 50 sec. In another device, a group III nitride compound semiconductor layer having a thickness of from 0.01 to 3.2 μm is grown at a temperature of from 1000 to 1180° C. on a sapphire substrate having a surface nitride layer having a thickness of not larger than 300 Å.
REFERENCES:
patent: 5122845 (1992-06-01), Manabe et al.
patent: 5218216 (1993-06-01), Manabe et al.
patent: 5571603 (1996-11-01), Utumi et al.
patent: 5741724 (1998-04-01), Ramdani et al.
patent: 5909040 (1999-06-01), Ohba et al.
patent: 5936329 (1999-08-01), Shibata et al.
patent: 5990495 (1999-11-01), Ohba
patent: 59-57997 (1984-04-01), None
patent: 62-119196 (1987-05-01), None
patent: 2-229476 (1990-09-01), None
patent: 5-41541 (1993-02-01), None
patent: 7-235692 (1995-09-01), None
patent: 7-321374 (1995-12-01), None
patent: 9-64477 (1997-03-01), None
patent: 9-148626 (1997-06-01), None
O. Briot, et al.; “Optimization . . . of GaN on Sapphire”; Materials Science Engineering,, B43, pp. 147-153; 1997.
R. Uchida, et al.; “Characterization . . . of GaN”; Solid-Solid State Electronics, vol. 41, No. 2, pp. 135-139; 1997.
D. Byun, et al.; “Reactive . . . GaN Growth”; Thin Solid Films 326, pp. 151-153; 1998.
T. Kachi, et al.; “A New . . . Phase Epitaxy”; XP-000742752, vol. 72 No. 6, 1998.
European Search Report dated Dec. 7, 2001.
Korean Office Action dated Jun. 27, 2002.
Asami Shinya
Asami Shizuyo
Chiyo Toshiaki
Ito Jun
Senda Masanobu
Hiteshew Felisa
McGinn & Gibb PLLC
Toyoda Gosei Co,., Ltd.
LandOfFree
Group III nitride compound semiconductor device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Group III nitride compound semiconductor device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Group III nitride compound semiconductor device and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3408744